標題: ESD protection design for CMOS integrated circuits with mixed-voltage I/O interfaces
作者: Chang, Wei-Jen
Ker, Ming-Dou
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2006
摘要: With consideration on the gate-oxide reliability, the new ESD protection design with ESD bus for 1.2/2.5-V mixed-voltage I/O interfaces is reported by using the new proposed high-voltage-tolerant power-rail electrostatic discharge (ESD) clamp circuit. This proposed power-rail ESD clamp circuit with only 1.2-V low-voltage NMOS/PMOS devices can be operated under the 2.5-V input conditions without suffering the gate-oxide reliability issue. The experimental results in a 0.13-mu m CMOS process have confirmed that the proposed power-rail ESD clamp circuit has high human-body-model (HBM) and machine-model (MM) ESD robustness and fast turn-on speed. The proposed power-rail ESD clamp circuit is an excellent ESD protection solution to the mixed-voltage I/O interfaces.
URI: http://hdl.handle.net/11536/17386
ISBN: 1-4244-0156-9
期刊: Prime 2006: 2nd Conference on PH.D. Research in MicroElectronic and Electronics, Proceedings
起始頁: 305
結束頁: 308
顯示於類別:會議論文