| 標題: | Circuit performance degradation of sample-and-hold amplifier due to gate-oxide overstress in a 130-nm CMOS process |
| 作者: | Chen, Jung-Sheng Ker, Ming-Dou 電機學院 College of Electrical and Computer Engineering |
| 公開日期: | 2006 |
| 摘要: | The effect of gate-oxide reliability on MOS switch in the bootstrapped circuit is investigated with the sample-and-hold amplifier in a 130-nm CMOS process. After overstress on the MOS switch of sample-and-hold amplifier, the circuit performances in the frequency domain are measured to verify the impact of gate-oxide reliability on circuit performance. |
| URI: | http://hdl.handle.net/11536/17479 http://dx.doi.org/10.1109/RELPHY.2006.251334 |
| ISBN: | 0-7803-9498-4 |
| DOI: | 10.1109/RELPHY.2006.251334 |
| 期刊: | 2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL |
| 起始頁: | 705 |
| 結束頁: | 706 |
| Appears in Collections: | Conferences Paper |
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- Circuit performance degradation of switched-capacitor circuit with bootstrapped technique due to gate-oxide overstress in a 130-nm CMOS process / Chen, Jung-Sheng;Ker, Ming-Dou
- Gate-oxide reliability on CMOS analog amplifiers in a 130-nm low-voltage CMOS processes / Chen, Jung-Sheng;Ker, Ming-Dou
- Impact of MOSFET gate-oxide reliability on CMOS operational amplifier in a 130-nm low-voltage process / Ker, Ming-Dou;Chen, Jung-Sheng
- Impact of MOSFET gate-oxide reliability on CMOS operational amplifiers in a 130-nm low-voltage CMOS process / Chen, JS;Ker, MD
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