DC and AC NBTI stresses in pMOSFETs with PE-SiN capping

Title:	DC and AC NBTI stresses in pMOSFETs with PE-SiN capping
Authors:	Lu, Chia-Yu Lin, Horng-Chih Chang, Yi-Feng Huang, Tiao-Yuan 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
Issue Date:	2006
URI:	http://hdl.handle.net/11536/17482 http://dx.doi.org/10.1109/RELPHY.2006.251345
ISBN:	0-7803-9498-4
DOI:	10.1109/RELPHY.2006.251345
Journal:	2006 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 44TH ANNUAL
Begin Page:	727
End Page:	728
Appears in Collections:	Conferences Paper

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APA	Lu, C., Lin, H., Chang, Y., & Huang, T. (2006). DC and AC NBTI stresses in pMOSFETs with PE-SiN capping. WOS:000240855800160.
Bibtex	@article{Lu2006DC, title={DC and AC NBTI stresses in pMOSFETs with PE-SiN capping}, author={Lu, Chia-Yu and Lin, Horng-Chih and Chang, Yi-Feng and Huang, Tiao-Yuan}, journal={WOS:000240855800160}, year={2006}, url={https://ir.lib.nycu.edu.tw/handle/11536/17482}, }