標題: P-channel SONOS transient current modeling for program and erase
作者: Du, Pei-Ying
Guo, Jyh-Chyurn
Lee, H. M.
Chen, H. M.
Shen, Rick
Hsu, C. C. -H.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2006
摘要: Transient current models with time and field dependence are proposed. The time dependence follows asymptotic t(-1) behavior with slower tunneling rate for erase (ERS) than program (PGM). The field dependence follows FN tunneling in higher field for PGM and intermediate field for ERS with relatively higher corner field for saturation. The models have been justified for P-channel SONOS (P-SONOS) with splits of ONO scheme.
URI: http://hdl.handle.net/11536/17507
ISBN: 1-4244-0181-X
期刊: 2006 International Symposium on VLSI Technology, Systems, and Applications (VLSI-TSA), Proceedings of Technical Papers
起始頁: 32
結束頁: 33
Appears in Collections:Conferences Paper