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dc.contributor.authorHuang, SYen_US
dc.contributor.authorChen, KMen_US
dc.contributor.authorHuang, GWen_US
dc.contributor.authorYang, DYen_US
dc.contributor.authorChang, CYen_US
dc.date.accessioned2014-12-08T15:25:08Z-
dc.date.available2014-12-08T15:25:08Z-
dc.date.issued2006en_US
dc.identifier.isbn0-7803-9472-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/17524-
dc.description.abstractEffects of hot carrier stress (HCS) and oxide breakdown (OBD) on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that under the same dc degradation, the cut-off frequency (f(Tau)) and maximum oscillation frequency (f(max)) suffered mode seriously by OBD than by HCS. Minimum noise figure (NFmin) is one of the main concerns in RF characteristics. NFmin increased dramatically after OBD than that after HCS due to the added gate leakage paths. Those effects can be clarified and explained by using a constructed explained small-signal model.en_US
dc.language.isoen_USen_US
dc.subjectRF MOSFETsen_US
dc.subjectmodelen_US
dc.subjecthot-carrier stressen_US
dc.subjectoxide breakdownen_US
dc.subjectnoise figureen_US
dc.titleCharacterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdownen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papersen_US
dc.citation.spage81en_US
dc.citation.epage84en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000235866900019-
Appears in Collections:Conferences Paper


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