Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown

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DC 欄位	值	語言
dc.contributor.author	Huang, SY	en_US
dc.contributor.author	Chen, KM	en_US
dc.contributor.author	Huang, GW	en_US
dc.contributor.author	Yang, DY	en_US
dc.contributor.author	Chang, CY	en_US
dc.date.accessioned	2014-12-08T15:25:08Z	-
dc.date.available	2014-12-08T15:25:08Z	-
dc.date.issued	2006	en_US
dc.identifier.isbn	0-7803-9472-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17524	-
dc.description.abstract	Effects of hot carrier stress (HCS) and oxide breakdown (OBD) on the main figures-of-merit of RF MOSFETs are examined in this paper. We found that under the same dc degradation, the cut-off frequency (f(Tau)) and maximum oscillation frequency (f(max)) suffered mode seriously by OBD than by HCS. Minimum noise figure (NFmin) is one of the main concerns in RF characteristics. NFmin increased dramatically after OBD than that after HCS due to the added gate leakage paths. Those effects can be clarified and explained by using a constructed explained small-signal model.	en_US
dc.language.iso	en_US	en_US
dc.subject	RF MOSFETs	en_US
dc.subject	model	en_US
dc.subject	hot-carrier stress	en_US
dc.subject	oxide breakdown	en_US
dc.subject	noise figure	en_US
dc.title	Characterization and modeling of RF MOSFETs under hot carrier stress and oxide breakdown	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, Digest of Papers	en_US
dc.citation.spage	81	en_US
dc.citation.epage	84	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000235866900019	-
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