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dc.contributor.authorKuo, Chien-Ien_US
dc.contributor.authorHsu, Heng-Tungen_US
dc.contributor.authorWu, Chien-Yingen_US
dc.contributor.authorChang, Edward Yien_US
dc.contributor.authorMiyamoto, Yasuyukien_US
dc.contributor.authorChen, Yu-Linen_US
dc.contributor.authorBiswas, Dhrubesen_US
dc.date.accessioned2014-12-08T15:25:10Z-
dc.date.available2014-12-08T15:25:10Z-
dc.date.issued2009en_US
dc.identifier.isbn978-1-4244-3432-9en_US
dc.identifier.issn1092-8669en_US
dc.identifier.urihttp://hdl.handle.net/11536/17560-
dc.identifier.urihttp://dx.doi.org/10.1109/ICIPRM.2009.5012458en_US
dc.description.abstractA 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.en_US
dc.language.isoen_USen_US
dc.subjectInAs-channelen_US
dc.subjectHEMTsen_US
dc.subjectsub-millimeter-waveen_US
dc.titleA 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)en_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/ICIPRM.2009.5012458en_US
dc.identifier.journal2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)en_US
dc.citation.spage128en_US
dc.citation.epage131en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000270539400034-
Appears in Collections:Conferences Paper


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