A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)

doi:10.1109/ICIPRM.2009.5012458

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Kuo, Chien-I	en_US
dc.contributor.author	Hsu, Heng-Tung	en_US
dc.contributor.author	Wu, Chien-Ying	en_US
dc.contributor.author	Chang, Edward Yi	en_US
dc.contributor.author	Miyamoto, Yasuyuki	en_US
dc.contributor.author	Chen, Yu-Lin	en_US
dc.contributor.author	Biswas, Dhrubes	en_US
dc.date.accessioned	2014-12-08T15:25:10Z	-
dc.date.available	2014-12-08T15:25:10Z	-
dc.date.issued	2009	en_US
dc.identifier.isbn	978-1-4244-3432-9	en_US
dc.identifier.issn	1092-8669	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17560	-
dc.identifier.uri	http://dx.doi.org/10.1109/ICIPRM.2009.5012458	en_US
dc.description.abstract	A 40-nm T-gate high-electron-mobility-transistor with InAs/In(0.7)Ga(0.3)As composite-channel has been fabricated. The device exhibits a transconductance (g.) of 2200 mS/mm, a cutoff frequency f(T) of 506 GHz and a minimum noise figure of 1.21 dB at a frequency of 58 GHz. These performances make the device well-suited for millimeter-wave or sub-millimeter-wave applications.	en_US
dc.language.iso	en_US	en_US
dc.subject	InAs-channel	en_US
dc.subject	HEMTs	en_US
dc.subject	sub-millimeter-wave	en_US
dc.title	A 40-nm-Gate InAs/In(0.7)Ga(0.3)As Composite-Channel HEMT with 2200 mS/mm and 500-GHz f(T)	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/ICIPRM.2009.5012458	en_US
dc.identifier.journal	2009 IEEE 21ST INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE & RELATED MATERIALS (IPRM)	en_US
dc.citation.spage	128	en_US
dc.citation.epage	131	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000270539400034	-
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