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dc.contributor.authorWANG, CJen_US
dc.contributor.authorWU, JWen_US
dc.contributor.authorCHAN, SHen_US
dc.contributor.authorCHANG, CYen_US
dc.contributor.authorSZE, SMen_US
dc.contributor.authorFENG, MSen_US
dc.date.accessioned2014-12-08T15:03:12Z-
dc.date.available2014-12-08T15:03:12Z-
dc.date.issued1995-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://hdl.handle.net/11536/1767-
dc.description.abstractSilicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.en_US
dc.language.isoen_USen_US
dc.subjectGAINPen_US
dc.subjectDELTA DOPINGen_US
dc.subjectLP-MOCVDen_US
dc.subjectHALL-EFFECTen_US
dc.subjectC-Ven_US
dc.titleSILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITIONen_US
dc.typeArticleen_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERSen_US
dc.citation.volume34en_US
dc.citation.issue9Aen_US
dc.citation.spageL1107en_US
dc.citation.epageL1109en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.department電控工程研究所zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.contributor.departmentInstitute of Electrical and Control Engineeringen_US
Appears in Collections:Articles