SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	WANG, CJ	en_US
dc.contributor.author	WU, JW	en_US
dc.contributor.author	CHAN, SH	en_US
dc.contributor.author	CHANG, CY	en_US
dc.contributor.author	SZE, SM	en_US
dc.contributor.author	FENG, MS	en_US
dc.date.accessioned	2014-12-08T15:03:12Z	-
dc.date.available	2014-12-08T15:03:12Z	-
dc.date.issued	1995-09-01	en_US
dc.identifier.issn	0021-4922	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1767	-
dc.description.abstract	Silicon delta doping in GaInP material has been demonstrated by low-pressure metalorganic chemical vapor deposition (LP-MOCVD) and characterized by Hall-effect and capacitance-voltage (C-V) measurements. The mobility enhancement of delta-doped samples over their corresponding uniformly doped samples was observed. High sheet carrier density of N-S=1.21 x 10(13) cm(-2) could be obtained. A sharp carrier distribution profile with the full width at half maximum of 25 Angstrom has been achieved.	en_US
dc.language.iso	en_US	en_US
dc.subject	GAINP	en_US
dc.subject	DELTA DOPING	en_US
dc.subject	LP-MOCVD	en_US
dc.subject	HALL-EFFECT	en_US
dc.subject	C-V	en_US
dc.title	SILICON DELTA-DOPING OF GAINP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION	en_US
dc.type	Article	en_US
dc.identifier.journal	JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS	en_US
dc.citation.volume	34	en_US
dc.citation.issue	9A	en_US
dc.citation.spage	L1107	en_US
dc.citation.epage	L1109	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	電控工程研究所	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.contributor.department	Institute of Electrical and Control Engineering	en_US
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