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dc.contributor.authorChen, Han-Yuen_US
dc.contributor.authorChen, Kun-Mingen_US
dc.contributor.authorHuang, Guo-Weien_US
dc.contributor.authorChang, Chun-Yenen_US
dc.date.accessioned2014-12-08T15:25:19Z-
dc.date.available2014-12-08T15:25:19Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-9433-Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17708-
dc.description.abstractIn this paper, the anomalous dip in scattering parameters S(12) of SiGe HBTs is explained quantitatively for the first time. It was found that under constant collector-emitter voltage (V(CE)), an increase of base current (which corresponds to an increase of base-emitter capacitance (C pi) enhances the anomalous dip.en_US
dc.language.isoen_USen_US
dc.subjectanomalous dipen_US
dc.subjectbase currenten_US
dc.subjectheterojunction bipolar transistor (HBT)en_US
dc.subjectS-parametersen_US
dc.subjectSiGeen_US
dc.titleAn analysis of base current effect on the anomalous dip of scattering parameter S(12) in SiGeHBTsen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5en_US
dc.citation.spage1082en_US
dc.citation.epage1084en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000237449901103-
Appears in Collections:Conferences Paper


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