标题: On the doping effects for linearity improvement of InGaP/InGaAs PHEMT
作者: Lin, Yueh-Chin
Chang, J. W.
Chang, Edward Yi
Chang, X. Y.
材料科学与工程学系
Department of Materials Science and Engineering
关键字: channel doped;uniform doping;InGaP/InGaAs;PHEMT;IM3
公开日期: 2005
摘要: In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional delta-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement.
URI: http://hdl.handle.net/11536/17709
ISBN: 0-7803-9433-X
期刊: 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5
起始页: 1095
结束页: 1098
显示于类别:Conferences Paper