标题: | On the doping effects for linearity improvement of InGaP/InGaAs PHEMT |
作者: | Lin, Yueh-Chin Chang, J. W. Chang, Edward Yi Chang, X. Y. 材料科学与工程学系 Department of Materials Science and Engineering |
关键字: | channel doped;uniform doping;InGaP/InGaAs;PHEMT;IM3 |
公开日期: | 2005 |
摘要: | In this paper, doping effects for linearity improvement of InGaP/InGaAs PHEMT devices are discussed. The doping techniques of interest are the light channel doping and the uniform doping introduced to the conventional delta-doped PHEMT structure. Circuit analysis is performed for estimation of the third-order intermodulation distortion levels (IM3). The linearity performance is compared through the extracted parameters from measurement. |
URI: | http://hdl.handle.net/11536/17709 |
ISBN: | 0-7803-9433-X |
期刊: | 2005 ASIA-PACIFIC MICROWAVE CONFERENCE PROCEEDINGS, VOLS 1-5 |
起始页: | 1095 |
结束页: | 1098 |
显示于类别: | Conferences Paper |