General purpose RFICs using 0.35 um SiGeBiCMOS technology

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Meng, C	en_US
dc.contributor.author	Wu, TH	en_US
dc.contributor.author	Wu, TH	en_US
dc.date.accessioned	2014-12-08T15:25:20Z	-
dc.date.available	2014-12-08T15:25:20Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-9328-7	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17719	-
dc.description.abstract	This paper presents an overview of several 5 GHz general purpose RFICs implemented using 0.35 urn SiGe BiCMOS technology by our research group. These RFICs include emitter-inductively-degenerated cascode LNA, shunt-series shunt-shunt dual feedback wideband amplifier, common mode feedback Gilbert down-converter, Gilbert up-converter with LC current mirrors and Gilbert down-converter with polyphase filters for image rejection.	en_US
dc.language.iso	en_US	en_US
dc.title	General purpose RFICs using 0.35 um SiGeBiCMOS technology	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2005 Emerging Information Technology Conference (EITC)	en_US
dc.citation.spage	116	en_US
dc.citation.epage	117	en_US
dc.contributor.department	電信工程研究所	zh_TW
dc.contributor.department	Institute of Communications Engineering	en_US
dc.identifier.wosnumber	WOS:000236376100034	-
顯示於類別：	會議論文