Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy

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DC 欄位	值	語言
dc.contributor.author	Wang, SD	en_US
dc.contributor.author	Chang, MN	en_US
dc.contributor.author	Chen, CY	en_US
dc.contributor.author	Lei, TF	en_US
dc.date.accessioned	2014-12-08T15:25:22Z	-
dc.date.available	2014-12-08T15:25:22Z	-
dc.date.issued	2005	en_US
dc.identifier.isbn	0-7803-8803-8	en_US
dc.identifier.uri	http://hdl.handle.net/11536/17751	-
dc.identifier.uri	http://dx.doi.org/10.1109/RELPHY.2005.1493173	en_US
dc.description.abstract	Scanning capacitance microscopy (SCM) was employed to observe the oxide breakdown sites. The localized breakdown spots obviously exhibit low differential capacitance signals. The observed area of the breakdown spots approximately ranges from 6 nm to 13 nm in lateral direction. According to contact-mode atomic force microscopy (AFM) image, the surface morphology has little effect on the SCM signal.	en_US
dc.language.iso	en_US	en_US
dc.title	Investigation of localized breakdown spots in thin SiO(2) using scanning capacitance microscopy	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/RELPHY.2005.1493173	en_US
dc.identifier.journal	2005 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS - 43RD ANNUAL	en_US
dc.citation.spage	622	en_US
dc.citation.epage	623	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000230058000120	-
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