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dc.contributor.authorMeng, CCen_US
dc.contributor.authorWang, Wen_US
dc.date.accessioned2014-12-08T15:25:25Z-
dc.date.available2014-12-08T15:25:25Z-
dc.date.issued2005en_US
dc.identifier.isbn0-7803-8845-3en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/17810-
dc.identifier.urihttp://dx.doi.org/10.1109/MWSYM.2005.1517152en_US
dc.description.abstractLinearity can be improved drastically by sacrificing power gain with the same output power. GaAs MESFET devices with source-via-hole ground and with source-bond-wire ground are used to investigate the effect of source inductive feedback and input impedance mismatch on the effect of linearity. The output matching for all the devices are tuned for the maximum power condition. At 2.4 GHz, the device without source-bond-wire ground and input impedance mismatched has the highest linearity, OIP3=50 dBm, gain=13.5 dB gain and P-1dB=29 dBm while the device with source-via-hole ground and input impedance matched has the lowest linearity OIP3=40 dBm, 18.3 dB gain and P-IdB=29 dBm.en_US
dc.language.isoen_USen_US
dc.subjectpower ampliferen_US
dc.subjectMESFETsen_US
dc.subjectlinearityen_US
dc.subjectGaAsen_US
dc.subjectand intermodulationen_US
dc.titleLinearity improvement for power MESFET devices using source inductive feedback and input impedance mismatchen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1109/MWSYM.2005.1517152en_US
dc.identifier.journal2005 IEEE MTT-S International Microwave Symposium, Vols 1-4en_US
dc.citation.spage2063en_US
dc.citation.epage2066en_US
dc.contributor.department電信工程研究所zh_TW
dc.contributor.departmentInstitute of Communications Engineeringen_US
dc.identifier.wosnumberWOS:000234561203087-
Appears in Collections:Conferences Paper


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