標題: The Ge Enhance the Sensitivity for Bio-Sensor
作者: Chang, Kow-Ming
Kuo, Jiun-Ming
Chao, Wen-Chan
Liang, Chia-Jung
Wu, Heng-Hsin
Tzeng, Wen-Hsien
Wu, Tzu-liu
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2008
摘要: Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire Increases owing to APTS with positive charge. The his (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.
URI: http://hdl.handle.net/11536/1797
ISBN: 978-1-4244-1572-4
期刊: 2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3
起始頁: 811
結束頁: 814
顯示於類別:會議論文