Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chang, Kow-Ming | en_US |
dc.contributor.author | Kuo, Jiun-Ming | en_US |
dc.contributor.author | Chao, Wen-Chan | en_US |
dc.contributor.author | Liang, Chia-Jung | en_US |
dc.contributor.author | Wu, Heng-Hsin | en_US |
dc.contributor.author | Tzeng, Wen-Hsien | en_US |
dc.contributor.author | Wu, Tzu-liu | en_US |
dc.date.accessioned | 2014-12-08T15:03:14Z | - |
dc.date.available | 2014-12-08T15:03:14Z | - |
dc.date.issued | 2008 | en_US |
dc.identifier.isbn | 978-1-4244-1572-4 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/1797 | - |
dc.description.abstract | Nanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire Increases owing to APTS with positive charge. The his (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration. | en_US |
dc.language.iso | en_US | en_US |
dc.title | The Ge Enhance the Sensitivity for Bio-Sensor | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | 2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3 | en_US |
dc.citation.spage | 811 | en_US |
dc.citation.epage | 814 | en_US |
dc.contributor.department | 電子工程學系及電子研究所 | zh_TW |
dc.contributor.department | Department of Electronics Engineering and Institute of Electronics | en_US |
dc.identifier.wosnumber | WOS:000259893500184 | - |
Appears in Collections: | Conferences Paper |