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dc.contributor.authorChang, Kow-Mingen_US
dc.contributor.authorKuo, Jiun-Mingen_US
dc.contributor.authorChao, Wen-Chanen_US
dc.contributor.authorLiang, Chia-Jungen_US
dc.contributor.authorWu, Heng-Hsinen_US
dc.contributor.authorTzeng, Wen-Hsienen_US
dc.contributor.authorWu, Tzu-liuen_US
dc.date.accessioned2014-12-08T15:03:14Z-
dc.date.available2014-12-08T15:03:14Z-
dc.date.issued2008en_US
dc.identifier.isbn978-1-4244-1572-4en_US
dc.identifier.urihttp://hdl.handle.net/11536/1797-
dc.description.abstractNanowire is mainly used in biological sensor because it has the high surface-to-volume ratio. In this study, we have successfully fabricated the N-SiGe nanowire with different Ge concentration by side-wall spacer technique respectively. The 3-amino-propyltrime-thoxy-silane (APTS) was used to modify the surface, which can connect the bio-linker. The conductance of SiGe nanowire Increases owing to APTS with positive charge. The his (sulfosuccinimidyl) suberate sodium (BS3) as the bio-linker connects to APTS, and the conductance decreases because of negative charge. Finally, the protein immunoglobulin G (IGG) is linked to BS3, and the conductance reduces for negative charge. Comparing the conductance change; the SiGe nanowire with higher Ge concentration improved the sensitivity. But the over-higher Ge concentration (40%) did not increase the sensitivity; the reason maybe the higher defect appears at the surface as higher Ge concentration.en_US
dc.language.isoen_USen_US
dc.titleThe Ge Enhance the Sensitivity for Bio-Sensoren_US
dc.typeProceedings Paperen_US
dc.identifier.journal2008 2ND IEEE INTERNATIONAL NANOELECTRONICS CONFERENCE, VOLS 1-3en_US
dc.citation.spage811en_US
dc.citation.epage814en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000259893500184-
Appears in Collections:Conferences Paper