標題: | High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels |
作者: | Wu, YC Chang, CY Chang, TC Liu, PT Chen, CS Tu, CH Zan, HW Tai, YH Sze, SM 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics |
公開日期: | 2004 |
摘要: | We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH3 plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (>10(9)), a steep subthreshold slope (SS) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability. |
URI: | http://hdl.handle.net/11536/18125 |
ISBN: | 0-7803-8684-1 |
期刊: | IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST |
起始頁: | 777 |
結束頁: | 780 |
顯示於類別: | 會議論文 |