標題: High performance and high reliability polysilicon thin-film transistors with multiple nano-wire channels
作者: Wu, YC
Chang, CY
Chang, TC
Liu, PT
Chen, CS
Tu, CH
Zan, HW
Tai, YH
Sze, SM
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2004
摘要: We have investigated the lightly-doped drain (LDD) polysilicon thin-film transistors (poly-Si TFTs) with a series of multi-channel with different widths. The ten 67 nm-wide split channels TFT has best gate control due to its tri-gate structure, and has lowest poly-Si grain boundary defects, which were passivated by NH3 plasma effectively due to its split nano-wires structure. The proposed TFT exhibits high performance electrical characteristics, such as a high ON/OFF current ratio (>10(9)), a steep subthreshold slope (SS) of 137 mV/decade, an absence of drain-induced barrier lowering (DIBL), suppressed kink-effect, and superior reliability.
URI: http://hdl.handle.net/11536/18125
ISBN: 0-7803-8684-1
期刊: IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST
起始頁: 777
結束頁: 780
顯示於類別:會議論文