標題: | Transient-induced latchup in CMOS technology: Physical mechanism and device simulation |
作者: | Ker, MD Hsu, SF 電機學院 College of Electrical and Computer Engineering |
公開日期: | 2004 |
摘要: | The physical mechanism of (t) under bar ransient-induced (l) under bar atch (u) under barp (TLU) in CMOS ICs has been clearly characterized by device simulation and experimental verification in time domain perspective. An underdamped sine-wave-like voltage has been clarified as the real TLU-triggering stimulus under system-level (e) under bar lectro (s) under bar tatic (d) under bar ischarge (ESD) test. The specific "sweep-back" current caused by the minority carriers stored within the pnpn structure of CMOS ICs has been qualitatively proved to be the major cause of TLU. |
URI: | http://hdl.handle.net/11536/18127 |
ISBN: | 0-7803-8684-1 |
期刊: | IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST |
起始頁: | 937 |
結束頁: | 940 |
顯示於類別: | 會議論文 |