INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES

doi:10.1063/1.115512

標題:	INSTABILITY MECHANISMS FOR THE HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS WITH NEGATIVE AND POSITIVE BIAS STRESSES ON THE GATE ELECTRODES
作者:	TAI, YH TSAI, JW CHENG, HC SU, FC 奈米中心 Nano Facility Center
公開日期:	3-Jul-1995
URI:	http://dx.doi.org/10.1063/1.115512 http://hdl.handle.net/11536/1813
ISSN:	0003-6951
DOI:	10.1063/1.115512
期刊:	APPLIED PHYSICS LETTERS
Volume:	67
Issue:	1
起始頁:	76
結束頁:	78
Appears in Collections:	Articles