Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique

標題:	Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique
作者:	Gu, SH Wang, MT Chan, CT Zous, NK Yeh, CC Tsai, WJ Lu, TC Wang, TH Ku, J Lu, CY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2004
摘要:	The lateral distribution of programmed charge in a hot electron program/hot hole erase nitride storage flash cell is investigated by using a charge pumping technique. Our study shows that the secondly programmed bit has a wider trapped charge distribution than the first programmed bit. In addition, we find prograrnmed charge spreads further into the channel with program/erase cycle number.
URI:	http://hdl.handle.net/11536/18211 http://dx.doi.org/10.1109/RELPHY.2004.1315428
ISBN:	0-7803-8315-X
DOI:	10.1109/RELPHY.2004.1315428
期刊:	2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS
起始頁:	639
結束頁:	640
Appears in Collections:	Conferences Paper

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