NBTI effects of pMOSFETs with different nitrogen dose imlantation

標題:	NBTI effects of pMOSFETs with different nitrogen dose imlantation
作者:	Lee, YJ Tang, LC Wu, MH Chao, TS Ho, PT Lai, D Yang, WL Huang, TY 電子工程學系及電子研究所 Department of Electronics Engineering and Institute of Electronics
公開日期:	2004
摘要:	NBTI effects with different nitrogen dose implantation and regions were investigated. High nitrogen dose implantation in the channel or source/drain extension results in serious NBTI degradation. Both the dynamic NBTI effects and substrate hot holes effects were also discussed. DNBTI and I-CP were measured simultaneously. Reduction of DeltaV(TH) and I-CP after positive gate bias stressing is related with the recovery of interface states.
URI:	http://hdl.handle.net/11536/18213 http://dx.doi.org/10.1109/RELPHY.2004.1315449
ISBN:	0-7803-8315-X
DOI:	10.1109/RELPHY.2004.1315449
期刊:	2004 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS
起始頁:	681
結束頁:	682
Appears in Collections:	Conferences Paper

Files in This Item:

If it is a zip file, please download the file and unzip it, then open index.html in a browser to view the full text content.