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dc.contributor.authorKao, CCen_US
dc.contributor.authorChu, JTen_US
dc.contributor.authorHuang, HWen_US
dc.contributor.authorPeng, YCen_US
dc.contributor.authorYu, CCen_US
dc.contributor.authorHseih, YLen_US
dc.contributor.authorLin, CFen_US
dc.contributor.authorKuo, HCen_US
dc.contributor.authorWang, SCen_US
dc.date.accessioned2014-12-08T15:25:47Z-
dc.date.available2014-12-08T15:25:47Z-
dc.date.issued2004en_US
dc.identifier.isbn0-7803-8557-8en_US
dc.identifier.issn1092-8081en_US
dc.identifier.urihttp://hdl.handle.net/11536/18218-
dc.language.isoen_USen_US
dc.titleInGaN-based light-emitting diode with undercut side wallen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2en_US
dc.citation.spage286en_US
dc.citation.epage287en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000225390900142-
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