| Title: | InGaN-based light-emitting diode with undercut side wall |
| Authors: | Kao, CC Chu, JT Huang, HW Peng, YC Yu, CC Hseih, YL Lin, CF Kuo, HC Wang, SC 光電工程學系 Department of Photonics |
| Issue Date: | 2004 |
| URI: | http://hdl.handle.net/11536/18218 |
| ISBN: | 0-7803-8557-8 |
| ISSN: | 1092-8081 |
| Journal: | 2004 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2 |
| Begin Page: | 286 |
| End Page: | 287 |
| Appears in Collections: | Conferences Paper |
- Light-output enhancement in a nitride-based light-emitting diode with 22 degrees undercut sidewalls / Kao, CC;Kuo, HC;Huang, HW;Chu, JT;Peng, YC
- Enhancement in light output of InGaN-based microhole array light-emitting diodes / Hsueh, TH;Shen, JK;Huang, HW;Chu, JY;Kao, CC
- Output power enhancements of nitride-based light-emitting diodes with inverted pyramid sidewalls structure / Chang, Li-Chuan;Kuo, Cheng-Huang;Kuo, Chi-Wen
- Light-output enhancement of nano-roughened GaN laser lift-off light-emitting diodes formed by ICP dry etching / Kao, Chih-Chiang;Kuo, H. C.;Yeh, K. F.;Chu, J. T.;Peng, W. L.
- Luminance enhancement of flip-chip light-emitting diodes by geometric sapphire shaping structure / Lee, C. E.;Kuo, H. C.;Lee, Y. C.;Tsai, M. R.;Lu, T. C.
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