Title: Characteristics of (Pb, Sr)TiO3 films post treated by low temperature technologies
Authors: Wang, JL
Jan, CK
Shye, DC
Kuo, MW
Cheng, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2004
Abstract: The novel annealing technologies, rapid thermal annealing (RTA) and excimer laser annealing (ELA) at low substrate temperature (300degreesC), were applied on the (Pb, Sr)TiO3 (PSrT) films. The PSrT film post treated by ELA only exhibits ferroelectric property and lager dielectric constant than as-deposited PSrT film. The PSrT film post treated by RTA only shows poor P-E curve and large leakage current. Interesting, the electrical properties of the PSrT film can be greatly enhanced by both of the ELA and the succeeding RTA treatments, so ferroelectric properties and dielectric constant can be reached as high as 15 muC/cm(2) of P-s and 574 of dielectric constant. In this work, excellent electrical properties of PSrT film post treated by both of ELA and succeeding RTA at low substrate temperature were systematically studied.
URI: http://hdl.handle.net/11536/18301
ISBN: 1-56677-405-5
Journal: PHYSICS AND TECHNOLOGY OF HIGH-K GATE DIELECTRICS II
Volume: 2003
Issue: 22
Begin Page: 469
End Page: 478
Appears in Collections:Conferences Paper