LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR

doi:10.1109/55.388719

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	YEH, CF	en_US
dc.contributor.author	LIN, SS	en_US
dc.contributor.author	HONG, TY	en_US
dc.date.accessioned	2014-12-08T15:03:17Z	-
dc.date.available	2014-12-08T15:03:17Z	-
dc.date.issued	1995-07-01	en_US
dc.identifier.issn	0741-3106	en_US
dc.identifier.uri	http://dx.doi.org/10.1109/55.388719	en_US
dc.identifier.uri	http://hdl.handle.net/11536/1833	-
dc.description.abstract	Device performances of MOSFET's with SiO2-xFx gate oxides prepared by an extremely low-temperature (15 degrees C) liquid phase deposition (LPD) method were investigated. The electrical characteristics, including threshold voltage of 2.1 V, peak effective mobility (mu(eff)) of 525 cm(2)V . s, and subthreshold suing of 134 mV/decade, show the devices exhibit comparable performance to other low-temperature processed MOSFET's. This demonstrates that LPD SiO2-xFx can be a suitable candidate for future gate insulators in low-temperature processed MOSFET's.	en_US
dc.language.iso	en_US	en_US
dc.title	LOW-TEMPERATURE PROCESSED MOSFETS WITH LIQUID-PHASE DEPOSITED SIO2-XFX AS GATE INSULATOR	en_US
dc.type	Article	en_US
dc.identifier.doi	10.1109/55.388719	en_US
dc.identifier.journal	IEEE ELECTRON DEVICE LETTERS	en_US
dc.citation.volume	16	en_US
dc.citation.issue	7	en_US
dc.citation.spage	316	en_US
dc.citation.epage	318	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:A1995RE49100008	-
dc.citation.woscount	9	-
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