標題: Simulation of electrical characteristics of surrounding- and omega-shaped-gate nanowire FinFETs
作者: Tang, CS
Yu, SM
Chou, HM
Lee, JW
Li, YM
交大名義發表
National Chiao Tung University
關鍵字: nanodevice;semiconductor devices;nanowire;FinFET;omega-shaped-gate;surrounding-gate quantum correction model;density-gradient;coverage ration;3D simulation;turn-on and turn-off characteristics;gate capacitance;turn-on resistance;modeling and simulation
公開日期: 2004
摘要: In this paper, electrical characteristics of sub-10 not nanowire FinFETs are investigated using a three-dimensional (3D) quantum correction simulation. Two different nanowire FinFETs, surrounding-gate FinFET and omega-shaped-gate one, are simulated with density-gradient-based model and compared in terms of on/off current, turn-on resistance, gate capacitance. It is found that the characteristic difference between surrounding-gate FinFET and omega-shaped-gate FinFET with a 70% coverage is insignificant. However, the former possesses better DIBL effect than that latter with different coverage ratios. Our examination presented here is useful in the fabrication of omega-shaped nanowire FinFETs.
URI: http://hdl.handle.net/11536/18359
ISBN: 0-7803-8536-5
期刊: 2004 4TH IEEE CONFERENCE ON NANOTECHNOLOGY
起始頁: 281
結束頁: 283
Appears in Collections:Conferences Paper