A study of the fabrication of flip-chip bumps using dry-film

Abstract

This work is to study the dry-film photoresist to form patterns for Flip-Chip bumps on 300 mm wafers. The so-called "double-deck metal seed layer" process was also applied in this study by using sputtered 1000 Angstrom Ti (Titanium) and 5000 Angstrom Cu (Copper) metal layers. By welding the metal and solder electroplating technology on the chip of the integrated circuits, Cu / Ni / Solder alloy fill zip hole under bumps metallization after solder re-flowing at 220degreesC. This research optimizes the parameters of the dry-film photoresist, lithography technology, metal sputtering technology and metal electroplating technology.