標題: | Electromigration failure mechanism of Sn96.5Ag3.5 flip-chip solder bumps |
作者: | Shao, TL Chen, IH Chen, C 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2004 |
摘要: | The electromigration-induced failure of SnAg3.5 flip chip solder bumps was investigated at the current density of I x 10(4) A/cm(2) at 150 degreesC, and they failed after 22 hours of current stressing. Failure was found to be on anode/chip side, and large (Cu,Ni)(6)Sn-5 intermetallic compounds (IMCs) were observed on the interface of the UBM and the solder bump. A novel electromigration failure mechanism is proposed. Nickel atoms were migrated by electron flow from substrate side to chip side to form (Cu,Ni)(6)Sn-5 IMCs. The volume expansion due to the IMC formation may induce local high stress around the UBM and fail the contact of the anode/chip side. |
URI: | http://hdl.handle.net/11536/18426 |
ISBN: | 0-7803-8365-6 |
ISSN: | 0569-5503 |
期刊: | 54TH ELECTRONIC COMPONENTS & TECHNOLOGY CONFERENCE, VOLS 1 AND 2, PROCEEDINGS |
起始頁: | 979 |
結束頁: | 982 |
顯示於類別: | 會議論文 |