標題: Fabrication of p-side down GaN vertical ligbt emitting diodes on copper substrates by laser lift-off
作者: Chu, JT
Kuo, HC
Kao, CC
Huang, HW
Chu, CF
Lin, CF
Wang, SC
光電工程學系
Department of Photonics
公開日期: 2004
摘要: The fabrication process and performance characteristics of the laser lift-off (LLO) GaN light emitting diodes (LEDs) were investigated. The LLO-GaN LEDs with 300 x 300 mum(2) on Cu show a nearly 4-fold increase in the light output power over the regular LLO-LEDs on the sapphire substrate. High operation current for the LLO-LEDs on Cu was also demonstrated. The large area-emission of 1000 x 1000 Pm 2 of p-side down GaN LLO-LEDs on Cu were fabricated. Further improvement of max light output are achieved. The LLO process should be applicable to other GaN-based light emitting devices in particular for those high light output power and high operation current devices. (C) 2004 WILEY-VCH Verlag GmbH & Co, KGaA, Weinheim.
URI: http://hdl.handle.net/11536/18427
ISBN: 3-527-40570-4
期刊: 5TH INTERNATIONAL SYMPOSIUM ON BLUE LASER AND LIGHT EMITTING DIODES, PROCEEDINGS
起始頁: 2413
結束頁: 2416
Appears in Collections:Conferences Paper