Microwave coplanar filters on Si substrates

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DC Field	Value	Language
dc.contributor.author	Chan, KT	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Kuo, JT	en_US
dc.contributor.author	Chang, CY	en_US
dc.contributor.author	Duh, DS	en_US
dc.contributor.author	Lin, WJ	en_US
dc.contributor.author	Zhu, CX	en_US
dc.contributor.author	Li, MF	en_US
dc.contributor.author	Kwong, DL	en_US
dc.date.accessioned	2014-12-08T15:26:09Z	-
dc.date.available	2014-12-08T15:26:09Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	0-7803-7695-1	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18547	-
dc.description.abstract	High performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrate using proton implantation process. Very good insertion loss and filter characteristics close to ideal E-M simulation are. measured that demonstrates the excellent filter performance to 91 GHz.	en_US
dc.language.iso	en_US	en_US
dc.title	Microwave coplanar filters on Si substrates	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3	en_US
dc.citation.spage	1909	en_US
dc.citation.epage	1912	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000184045100498	-
Appears in Collections:	Conferences Paper