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dc.contributor.authorChan, KTen_US
dc.contributor.authorChin, Aen_US
dc.contributor.authorKuo, JTen_US
dc.contributor.authorChang, CYen_US
dc.contributor.authorDuh, DSen_US
dc.contributor.authorLin, WJen_US
dc.contributor.authorZhu, CXen_US
dc.contributor.authorLi, MFen_US
dc.contributor.authorKwong, DLen_US
dc.date.accessioned2014-12-08T15:26:09Z-
dc.date.available2014-12-08T15:26:09Z-
dc.date.issued2003en_US
dc.identifier.isbn0-7803-7695-1en_US
dc.identifier.issn0149-645Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18547-
dc.description.abstractHigh performance band-pass and band-stop microwave coplanar filters operating from 22 to 94 GHz have been realized on Si substrate using proton implantation process. Very good insertion loss and filter characteristics close to ideal E-M simulation are. measured that demonstrates the excellent filter performance to 91 GHz.en_US
dc.language.isoen_USen_US
dc.titleMicrowave coplanar filters on Si substratesen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3en_US
dc.citation.spage1909en_US
dc.citation.epage1912en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000184045100498-
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