完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Lien, YC | en_US |
dc.contributor.author | Chang, EY | en_US |
dc.contributor.author | Chu, LX | en_US |
dc.contributor.author | Chang, HC | en_US |
dc.contributor.author | Lee, CS | en_US |
dc.contributor.author | Chen, SH | en_US |
dc.contributor.author | Lin, YC | en_US |
dc.contributor.author | Lee, HM | en_US |
dc.date.accessioned | 2014-12-08T15:26:16Z | - |
dc.date.available | 2014-12-08T15:26:16Z | - |
dc.date.issued | 2003 | en_US |
dc.identifier.isbn | 0-7803-7887-3 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18653 | - |
dc.description.abstract | A metamorphic high electron-mobility transistor (HEMT) manufactured with reflowed submicron T-gate using E-beam lithography for high-speed optoelectronics applications is developed. The In0.53Al0.47As/InGaAs HEMT uses InxAl1-xAs as the buffer layer between GaAs substrate and the InP lattice-matched HEMT structure. The T-gate developed has a gate length of 0.1 mum. The fabricated metamorphic HEMT has a saturation drain current of 280mA/mrn and a transconductance of 840mS/mm at V-DS=1.2V Noise figure for 160 mum gate-width device is less than 1 dB and the associated gain is up to 14dB at 18GHz. The device demonstrates a cut-off frequency f(T) of 150GHz and a maximum frequency f(MAX) up to 350GHz. The metamorphic HEMT developed has the potential for high-speed optoelectronics applications. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A metamorphic high electron-mobitity transistor with reflowed submicron T-Gate for high-speed optoelectronics applications | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE SIXTH CHINESE OPTOELECTRONICS SYMPOSIUM | en_US |
dc.citation.spage | 281 | en_US |
dc.citation.epage | 283 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000189300100077 | - |
顯示於類別: | 會議論文 |