AlGaInP light-emitting diodes with metal substrate fabricated by wafer bonding

完整後設資料紀錄

DC 欄位	值	語言
dc.contributor.author	Peng, WC	en_US
dc.contributor.author	Wu, WCS	en_US
dc.date.accessioned	2014-12-08T15:26:16Z	-
dc.date.available	2014-12-08T15:26:16Z	-
dc.date.issued	2003	en_US
dc.identifier.isbn	1-56677-402-0	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18655	-
dc.description.abstract	AlGaInP LED with copper Substrate has been successfully fabricated by the wafer bonding technique in this study. it was found that bonded AlGaInP LED devices could be operated in a higher injection forward current above 500mA. Such bonding enhanced the device performance significantly. The joule heating exhibiting in conventional LEDs was eliminated because the copper substrate provided a good heat sink. Thus, the thermal degradation of the conventional LEDs was improved.	en_US
dc.language.iso	en_US	en_US
dc.title	AlGaInP light-emitting diodes with metal substrate fabricated by wafer bonding	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.journal	SEMICONDUCTOR WAFER BONDING VII: SCIENCE, TECHNOLOGY, AND APPLICATIONS, PROCEEDINGS	en_US
dc.citation.volume	2003	en_US
dc.citation.issue	19	en_US
dc.citation.spage	144	en_US
dc.citation.epage	153	en_US
dc.contributor.department	材料科學與工程學系	zh_TW
dc.contributor.department	Department of Materials Science and Engineering	en_US
dc.identifier.wosnumber	WOS:000189426900017	-
顯示於類別：	會議論文