Characteristics of Schottky barrier poly-Si thin film transistors with excimer laser annealing treatment

Abstract

Poly-Si Schottky barrier poly-Si thin-film transistors (SB TFT) with field-induced drain (FID) have recently been demonstrated. Such devices exhibit ambipolar operation capability with low off-state leakage current. In this study, we investigate and compare the characteristics of poly-Si SB TFTs with channel layer prepared by either excimer laser crystallization (ELC) or solid-phase crystallization (SPC) method. It is shown that the use of ELC could greatly improve the device characteristics compared to the SPC counterparts. Excellent device performance in terms of steep subthreshold slope and high on/off current ratio (>10(8)) for both p- and n-channel operations are demonstrated on a single device with ELC channel. The effects of sub-gate bias, channel length, and offset channel length, on device characteristics are also explored.