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dc.contributor.authorJUANG, JYen_US
dc.contributor.authorHORNG, JHen_US
dc.contributor.authorLIN, HCen_US
dc.contributor.authorWANG, SJen_US
dc.contributor.authorFU, CMen_US
dc.contributor.authorWU, KHen_US
dc.contributor.authorUEN, TMen_US
dc.contributor.authorGOU, YSen_US
dc.date.accessioned2014-12-08T15:03:19Z-
dc.date.available2014-12-08T15:03:19Z-
dc.date.issued1995-06-01en_US
dc.identifier.issn1051-8223en_US
dc.identifier.urihttp://hdl.handle.net/11536/1866-
dc.description.abstractA multi-step deposition and post annealing scheme has been developed for preparing nearly single phase, c-axis oriented TlBa2Ca2Cu3O9 (Tl-1223) superconducting thin films by dc-sputtering. The effects of the compensates used during post annealing on final phase formation suggest the crucial role played by thermodynamic conditions and further validates the viability of the present process scheme. In particular, films obtained by the present process have shown, for the first time in this system, a critical current density (Jc) above 10(6) A/cm(2) at 17 K with a zero- resistance transition temperature (Tco) above 110 K. The results are attributed to the improvement of film morphology, specifically a decreased density of weak-linking.en_US
dc.language.isoen_USen_US
dc.titleFABRICATION AND PROPERTIES OF DC-SPUTTERED TL-1223 SUPERCONDUCTING THIN-FILMSen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.journalIEEE TRANSACTIONS ON APPLIED SUPERCONDUCTIVITYen_US
dc.citation.volume5en_US
dc.citation.issue2en_US
dc.citation.spage1689en_US
dc.citation.epage1692en_US
dc.contributor.department交大名義發表zh_TW
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentNational Chiao Tung Universityen_US
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:A1995RP63700135-
Appears in Collections:Conferences Paper


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