標題: Fully silicided NiSi and germanided NiGe dual gates on SiO2/Si and Al2O3/Ge-on-insulator MOSFETs
作者: Huang, CH
Yu, DS
Chin, A
Wu, CH
Chen, WJ
Zhu, CX
Li, MF
Cho, BJ
Kwong, DL
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2003
摘要: We demonstrate for the first time fully silicided NiSi (4.55eV) and germanided NiGe (5.2eV) dual gates on 1.9nm-SiO2/Si and Al2O3/Ge-On-Insulator (GOI) MOSFETs (EOT = 1.7nm). In additional to the comparable gate current and time-to-breakdown with AI gate C-MOSFETs, the fully NiSi and NiGe gates on SiO2/Si show mobility close to universal mobility while on Al2O3/GOI show similar to2.0X higher peak electron and hole mobility than Al on Al2O3/Si with special advantage of NiSi and NiGe compatible to current VLSI process line.
URI: http://hdl.handle.net/11536/18687
ISBN: 0-7803-7872-5
期刊: 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
起始頁: 319
結束頁: 322
Appears in Collections:Conferences Paper