A novel wafer reclaim method for silicon carbide film

Abstract

As feature size keeps shrinking down, it is expected that amorphous SiC will replace Si3N4 in the Cu dual-damascene structure soon. SiC is chemically inert and is hard to be etched by wet processing. This property become adverse effect from the wafer reclaiming point of view. In this work, a novel wafer reclaiming method of oxidation followed by HF etching is proposed. Comparing with traditional reclaim method of wafer polish, this novel method exhibits great benefits of low cost, high throughput, and almost unlimited reclaim times.