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dc.contributor.authorChen, SHen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorLin, YCen_US
dc.date.accessioned2014-12-08T15:26:28Z-
dc.date.available2014-12-08T15:26:28Z-
dc.date.issued2002en_US
dc.identifier.isbn0-8194-4500-2en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18797-
dc.description.abstractA 3-V operated enhancement-mode pseudomorphic high electron mobility transistor (E-PHEMT) with high output power and high efficiency has been developed. The E-PHEMT has total gate width of 20 mm and gate length. of 0.5 mum. When the power performance was evaluated at 1.9 GHz, the E-PHEMT shows a saturation output power of 34.1 dBm (2.57 W) with power-added efficiency (PAE) of 64.5 % and power gain of 10.2 dB at 3 V bias. The linear gain under this testing condition is 14.9 dB. The E-PHEMTs developed have excellent power performance and are suitable for power amplifier application for cellular handsets.en_US
dc.language.isoen_USen_US
dc.titleA high power enhancement-mode pseudomorphic high electron mobility transistor with 2.5 W output power and 64.5 % efficiency at 3 Ven_US
dc.typeProceedings Paperen_US
dc.identifier.journalPROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2en_US
dc.citation.volume4746en_US
dc.citation.spage397en_US
dc.citation.epage399en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000177351400075-
Appears in Collections:Conferences Paper