Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Chen, SH | en_US |
dc.contributor.author | Chang, EY | en_US |
dc.contributor.author | Lin, YC | en_US |
dc.date.accessioned | 2014-12-08T15:26:28Z | - |
dc.date.available | 2014-12-08T15:26:28Z | - |
dc.date.issued | 2002 | en_US |
dc.identifier.isbn | 0-8194-4500-2 | en_US |
dc.identifier.issn | 0277-786X | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18797 | - |
dc.description.abstract | A 3-V operated enhancement-mode pseudomorphic high electron mobility transistor (E-PHEMT) with high output power and high efficiency has been developed. The E-PHEMT has total gate width of 20 mm and gate length. of 0.5 mum. When the power performance was evaluated at 1.9 GHz, the E-PHEMT shows a saturation output power of 34.1 dBm (2.57 W) with power-added efficiency (PAE) of 64.5 % and power gain of 10.2 dB at 3 V bias. The linear gain under this testing condition is 14.9 dB. The E-PHEMTs developed have excellent power performance and are suitable for power amplifier application for cellular handsets. | en_US |
dc.language.iso | en_US | en_US |
dc.title | A high power enhancement-mode pseudomorphic high electron mobility transistor with 2.5 W output power and 64.5 % efficiency at 3 V | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 | en_US |
dc.citation.volume | 4746 | en_US |
dc.citation.spage | 397 | en_US |
dc.citation.epage | 399 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000177351400075 | - |
Appears in Collections: | Conferences Paper |