標題: | A high power enhancement-mode pseudomorphic high electron mobility transistor with 2.5 W output power and 64.5 % efficiency at 3 V |
作者: | Chen, SH Chang, EY Lin, YC 材料科學與工程學系 Department of Materials Science and Engineering |
公開日期: | 2002 |
摘要: | A 3-V operated enhancement-mode pseudomorphic high electron mobility transistor (E-PHEMT) with high output power and high efficiency has been developed. The E-PHEMT has total gate width of 20 mm and gate length. of 0.5 mum. When the power performance was evaluated at 1.9 GHz, the E-PHEMT shows a saturation output power of 34.1 dBm (2.57 W) with power-added efficiency (PAE) of 64.5 % and power gain of 10.2 dB at 3 V bias. The linear gain under this testing condition is 14.9 dB. The E-PHEMTs developed have excellent power performance and are suitable for power amplifier application for cellular handsets. |
URI: | http://hdl.handle.net/11536/18797 |
ISBN: | 0-8194-4500-2 |
ISSN: | 0277-786X |
期刊: | PROCEEDINGS OF THE ELEVENTH INTERNATIONAL WORKSHOP ON THE PHYSICS OF SEMICONDUCTOR DEVICES, VOL 1 & 2 |
Volume: | 4746 |
起始頁: | 397 |
結束頁: | 399 |
顯示於類別: | 會議論文 |