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dc.contributor.authorLin, GRen_US
dc.contributor.authorPan, CLen_US
dc.date.accessioned2014-12-08T15:01:18Z-
dc.date.available2014-12-08T15:01:18Z-
dc.date.issued1997-11-17en_US
dc.identifier.issn0003-6951en_US
dc.identifier.urihttp://hdl.handle.net/11536/187-
dc.description.abstractUltrafast optoelectronic characteristics of GaAs implanted with 200 keV arsenic ions at dosage as low as 10(13) ions/cm(2) are reported. Ultrashort photoexcited carrier lifetimes of 0.23+/-0.02, 0.87+/-0.02, and 3+/-0.2 ps were determined for as-implanted, rapid thermal annealing (RTA) (600 degrees C for 30 s) and furnace-annealed (600 degrees C for 30 min) arsenic-ion-implanted GaAs or GaAs:As+, respectively. The switching response of photoconductive switches (PCSs) fabricated on the latter two materials were similar to 3 and 8 ps, respectively. The leakage current of the PCS fabricated on furnace-annealed sample was as low as 30 nA. The breakdown fields exceeded 150 (instrument-limited) and 90 kV/cm for furnace-and RTA-annealed samples, respectively. The optical responsivity of low-dosage arsenic-implanted GaAs photoconductive switch can be as high as 0.01 A/W. This also compared favorably with the same device made on state-of-the-art photoconductor such as molecular-beam epitaxy grown GaAs at low temperatures. (C) 1997 American Institute of Physics.en_US
dc.language.isoen_USen_US
dc.titlePicosecond responses of low-dosage arsenic-ion-implanted GaAs photoconductorsen_US
dc.typeArticleen_US
dc.identifier.journalAPPLIED PHYSICS LETTERSen_US
dc.citation.volume71en_US
dc.citation.issue20en_US
dc.citation.spage2901en_US
dc.citation.epage2903en_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:A1997YF67500011-
dc.citation.woscount15-
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