RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics

doi:10.1109/MWSYM.2002.1011593

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DC 欄位	值	語言
dc.contributor.author	Chen, SB	en_US
dc.contributor.author	Lai, CH	en_US
dc.contributor.author	Chin, A	en_US
dc.contributor.author	Hsieh, JC	en_US
dc.contributor.author	Liu, J	en_US
dc.date.accessioned	2014-12-08T15:26:31Z	-
dc.date.available	2014-12-08T15:26:31Z	-
dc.date.issued	2002	en_US
dc.identifier.isbn	0-7803-7239-5	en_US
dc.identifier.issn	0149-645X	en_US
dc.identifier.uri	http://hdl.handle.net/11536/18827	-
dc.identifier.uri	http://dx.doi.org/10.1109/MWSYM.2002.1011593	en_US
dc.description.abstract	Record high capacitance density of 0.5 and 1.0 muF/cm(2) are obtained for Al2O3 and AlTiOx MIM capacitors respectively, with loss tangent < 0.01 and process compatible to existing VLSI back-end integration. However, the AlTiOx MINI capacitor has large capacitance reduction as increasing frequencies. In contrast, the Al2O3 MINI capacitor has good device integrity of low leakage current of 4.3x10(-8) A/cm(2), small frequency-dependent capacitance reduction, and good reliability.	en_US
dc.language.iso	en_US	en_US
dc.title	RF MIM capacitors using high-K Al2O3 and AlTiOx dielectrics	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/MWSYM.2002.1011593	en_US
dc.identifier.journal	2002 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3	en_US
dc.citation.spage	201	en_US
dc.citation.epage	204	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000178310900045	-
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