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dc.contributor.authorChen, SHen_US
dc.contributor.authorChang, EYen_US
dc.contributor.authorLin, YCen_US
dc.date.accessioned2014-12-08T15:26:42Z-
dc.date.available2014-12-08T15:26:42Z-
dc.date.issued2001en_US
dc.identifier.isbn0-7803-7138-0en_US
dc.identifier.urihttp://hdl.handle.net/11536/18968-
dc.description.abstractA 2.4 V operated enhancement-mode pseudormorphic high electron mobility transistors (E-PHEMTs) with high output power and power-added-efficiency (PAE) have been developed. With optimally designed epitaxial structure and gate recess process, the E-PHEMT shows high power performance and high power gain. Under 2.4 V bias at 1.9 GHz, the E-PHEMT shows maximum output power of 32.25 dBm and maximum power-added efficiency of 61.45% with linear power gain of 13.93 dB when the device was tuned for maximum output power match. When tuned for maximum output power added efficiency, the E-PHEMT can achieve a maximum PAE of 78.51%. The developed E-PHEMT with superior power performance is one of the candidates for power amplifiers used for 2.4 V-operated 3G wireless communication system.en_US
dc.language.isoen_USen_US
dc.title2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61 % power efficenciecyen_US
dc.typeProceedings Paperen_US
dc.identifier.journalAPMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGSen_US
dc.citation.spage1291en_US
dc.citation.epage1294en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000177768600311-
Appears in Collections:Conferences Paper