完整後設資料紀錄
DC 欄位 | 值 | 語言 |
---|---|---|
dc.contributor.author | Chen, SH | en_US |
dc.contributor.author | Chang, EY | en_US |
dc.contributor.author | Lin, YC | en_US |
dc.date.accessioned | 2014-12-08T15:26:42Z | - |
dc.date.available | 2014-12-08T15:26:42Z | - |
dc.date.issued | 2001 | en_US |
dc.identifier.isbn | 0-7803-7138-0 | en_US |
dc.identifier.uri | http://hdl.handle.net/11536/18968 | - |
dc.description.abstract | A 2.4 V operated enhancement-mode pseudormorphic high electron mobility transistors (E-PHEMTs) with high output power and power-added-efficiency (PAE) have been developed. With optimally designed epitaxial structure and gate recess process, the E-PHEMT shows high power performance and high power gain. Under 2.4 V bias at 1.9 GHz, the E-PHEMT shows maximum output power of 32.25 dBm and maximum power-added efficiency of 61.45% with linear power gain of 13.93 dB when the device was tuned for maximum output power match. When tuned for maximum output power added efficiency, the E-PHEMT can achieve a maximum PAE of 78.51%. The developed E-PHEMT with superior power performance is one of the candidates for power amplifiers used for 2.4 V-operated 3G wireless communication system. | en_US |
dc.language.iso | en_US | en_US |
dc.title | 2.4 V-operated enhancement mode PHEMT with 32 dBm output power and 61 % power efficenciecy | en_US |
dc.type | Proceedings Paper | en_US |
dc.identifier.journal | APMC 2001: ASIA-PACIFIC MICROWAVE CONFERENCE, VOLS 1-3, PROCEEDINGS | en_US |
dc.citation.spage | 1291 | en_US |
dc.citation.epage | 1294 | en_US |
dc.contributor.department | 材料科學與工程學系 | zh_TW |
dc.contributor.department | Department of Materials Science and Engineering | en_US |
dc.identifier.wosnumber | WOS:000177768600311 | - |
顯示於類別: | 會議論文 |