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dc.contributor.authorChang, KMen_US
dc.contributor.authorYou, KSen_US
dc.contributor.authorWu, CHen_US
dc.contributor.authorSheu, JTen_US
dc.date.accessioned2014-12-08T15:26:42Z-
dc.date.available2014-12-08T15:26:42Z-
dc.date.issued2001en_US
dc.identifier.isbn0-8194-4322-0en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/18975-
dc.identifier.urihttp://dx.doi.org/10.1117/12.448972en_US
dc.description.abstractSilicon nanostructures have been demonstrated by electric-field-enhanced localized oxidation on single crystal silicon wafer using a scanning probe microscope (SPM). In this study, we have demonstrated the use of scanning probe lithography (SPL) and orientation-dependent etching (ODE) can easily obtain nano-wire and nano-gap down to 24nm and 60nm on (110)-oriented silicon substrate. The scanning probe lithography (SPL) provides high resolution, which can be adjusted by tip bias, tip set force, scanning speed, and ambient humidity of environment, without damage in the substrate. The etching process employed the orientation-dependent etching (ODE), because of the etching rate of the (Ill)-plane is slower than any other crystallographic planes such that anisotropic etching profile can be obtained. The experimental samples were hydrogen-passivated by dipping in 10% aqueous HF solution to remove sample native oxide on the surface before SPM localized oxidation process. The SiOx nano-patterns on (110)-oriented silicon substrate were generated by SPM localized oxidation. Then, the etching process employed the ODE with a 34 wt.% aqueous KOH solution. The nano-wire feature size is easily down to 24nm and aspect ratio larger than 4:1. The optimization fine/space nanostructure is about 20 nm/80 nm and the nano-gap is about 60nm. In this study, we also have demonstrated the influence of etching temperature on the feature size of nanostructures with same aspect ratio. At the same etching depth (100nm), the line-width decreases with increasing the etching temperature. The theoretic etching rate and experimental etching rate are proportional to temperature, the higher temperature the higher etching rate.en_US
dc.language.isoen_USen_US
dc.subjectnanostructureen_US
dc.subjectscanning probe lithography (SPL)en_US
dc.subjectscanning probe microscope (SPM)en_US
dc.subjectlocalized oxidationen_US
dc.subjectOrientation-dependent etching (ODE)en_US
dc.subjectKOH wet etchingen_US
dc.titleSingle-crystal silicon nanostructure fabrication by scanning probe lithography and anisotropic wet etchingen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.448972en_US
dc.identifier.journalDEVICE AND PROCESS TECHNOLOGIES FOR MEMS AND MICROELECTRONICS IIen_US
dc.citation.volume4592en_US
dc.citation.spage34en_US
dc.citation.epage42en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000174910000004-
Appears in Collections:Conferences Paper


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