Title: Transmission line noise from standard and proton-implanted Si
Authors: Chan, KT
Chin, A
Kwei, CM
Shien, DT
Lin, WJ
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 2001
Abstract: We have measured the NF(min) of transmission lines on 10(6) ohm-cm proton implanted Si, Si-on-Quartz, and standard Si with top isolation oxide. Trransmission lines on proton implanted Si shows the lowest NF(min) of less than 0.2dB because of the low substrate loss due to the high resistivity. The proton implantation did not contribute to excess shot noise induced by carriers trapping and de-trapping because of the very small diffusion length to metal line.
URI: http://hdl.handle.net/11536/19052
ISBN: 0-7803-6538-0
ISSN: 0149-645X
Journal: 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
Begin Page: 763
End Page: 766
Appears in Collections:Conferences Paper