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dc.contributor.authorHuang, KYen_US
dc.contributor.authorLi, YMen_US
dc.contributor.authorLee, CPen_US
dc.contributor.authorSze, SMen_US
dc.date.accessioned2014-12-08T15:26:53Z-
dc.date.available2014-12-08T15:26:53Z-
dc.date.issued2001en_US
dc.identifier.isbn3-211-83708-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/19123-
dc.description.abstractIn this paper, a new simulation method for two-tone characteristics calculations and the third-order intercept point (OIP3) of heterojunction bipolar transistor (HBT) in large-scale time domain is proposed. Base on waveform relaxation (WR) and monotone iterative (MI) methods, we solve a set of nonlinear ordinary differential equation (ODE) of equivalent circuit. With this approach, the two-tone characteristics in frequency domain for HBTs were directly computed from time domain result with fast Fourier transform (FFT). Simulation results on a realistic HBT are presented to show the accuracy and efficiency of the method.en_US
dc.language.isoen_USen_US
dc.titleA computational efficient method for HBT intermodulation distortions and two-tone characteristics simulationen_US
dc.typeProceedings Paperen_US
dc.identifier.journalSIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001en_US
dc.citation.spage226en_US
dc.citation.epage229en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000172900500049-
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