標題: Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
作者: Tsai, CW
Gu, SH
Chiang, LP
Wang, TH
Liu, YC
Huang, LS
Wang, MC
Hsia, LC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2000
摘要: Enhanced hot carrier degradation with stress V-g in the valence-band tunneling regime is observed. This degradation is attributed to channel hole creation by valence-band electron tunneling. The created holes provide for Auger recombination with electrons in the channel and thus increase hot electron energy. The valence-band tunneling enhanced hot carrier degradation becomes more serious as gate oxide thickness is reduced. In ultra-thin gate oxide nMOSFETs, our result shows that the valence-band tunneling enhanced degradation, as opposed to max. Tb stress induced degradation, exhibits positive dependence on substrate bias. This phenomenon may cause a severe reliability issue in positively biased substrate or floating substrate devices.
URI: http://hdl.handle.net/11536/19188
http://dx.doi.org/10.1109/IEDM.2000.904277
ISBN: 0-7803-6439-2
DOI: 10.1109/IEDM.2000.904277
期刊: INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST
起始頁: 139
結束頁: 142
Appears in Collections:Conferences Paper


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