Electrical reliability issues of integrating low-K dielectrics with Cu metallization

doi:10.1109/IITC.2000.854289

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DC 欄位	值	語言
dc.contributor.author	Wu, ZC	en_US
dc.contributor.author	Shiung, ZW	en_US
dc.contributor.author	Wang, CC	en_US
dc.contributor.author	Fang, KL	en_US
dc.contributor.author	Wu, RG	en_US
dc.contributor.author	Liu, YL	en_US
dc.contributor.author	Tsui, BY	en_US
dc.contributor.author	Chen, MC	en_US
dc.contributor.author	Chang, W	en_US
dc.contributor.author	Chou, PF	en_US
dc.contributor.author	Jang, SM	en_US
dc.contributor.author	Yu, CH	en_US
dc.contributor.author	Liang, MS	en_US
dc.date.accessioned	2014-12-08T15:27:01Z	-
dc.date.available	2014-12-08T15:27:01Z	-
dc.date.issued	2000	en_US
dc.identifier.isbn	0-7803-6327-2	en_US
dc.identifier.uri	http://hdl.handle.net/11536/19229	-
dc.identifier.uri	http://dx.doi.org/10.1109/IITC.2000.854289	en_US
dc.description.abstract	Electrical reliability issues of two organic aromatic low-K materials (K = 2.6 similar to 2.8) were investigated. Both materials show acceptable thermal stability and good dielectric barrier property against Cu penetration. C-V curve instability was observed under bias-temperature stress (BTS) for the first time. It can be explained by the model of stress induced dielectric polarization charges. This instability may be an issue of long term stability of circuits.	en_US
dc.language.iso	en_US	en_US
dc.title	Electrical reliability issues of integrating low-K dielectrics with Cu metallization	en_US
dc.type	Proceedings Paper	en_US
dc.identifier.doi	10.1109/IITC.2000.854289	en_US
dc.identifier.journal	PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE	en_US
dc.citation.spage	82	en_US
dc.citation.epage	84	en_US
dc.contributor.department	電子工程學系及電子研究所	zh_TW
dc.contributor.department	Department of Electronics Engineering and Institute of Electronics	en_US
dc.identifier.wosnumber	WOS:000088358400028	-
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