Characteristics of optical properties of the interrupt growth method on InGaN/GaN MQW structures

Abstract

The growth method and material properties of InGaN/GaN multiple quantum well (MQW) structures were studied in this experiment. The InGaN/GaN-MQW structure were deposited above the 2 mum-thick high quality GaN layers (with background carrier concentration was about 3.2 x 10(16) cm(-3)) on Al2O3 substrates. The interrupt growth time was 10 sec between GaN barrier layer and InGaN well growth at 690 degreesC. The stronger intensity and sharper photoluminescence (PL) spectra was observed from the interrupt growth MQW structures. The mean deviation of the PL peak position was lower than 1% by using the interrupt growth MQW structures at difference growth temperature. The PL spectra was become broaden and weaker by reducing the interrupt time during InGaN/GaN growth. The thickness of one pair InGaN/GaN was also identified by DCX-ray measurement and the growth rate InGaN layer was also calculated in this experiment.