標題: Long-term photocapacitance decay behavior in undoped GaN
作者: Chung, HM
Pan, YC
Chung, WC
Chen, NC
Tsai, CC
Chiang, CI
Lin, CH
Chang, H
Lee, MC
Chen, WH
Chen, WK
電子物理學系
Department of Electrophysics
關鍵字: GaN;photocapacitance;logarithmic
公開日期: 2000
摘要: We have employed the photocapacitance measurement to examine the physical properties of GaN Schottky diode made from the undoped epilayer grown by metalorganic vapor phase epitaxy. The resulted transient capacitance spectrum shows that the diode exhibits a characteristic of long-term logarithmic-type decaying behavior, which, we believe, is correlated closely to the linear arranged traps close to the core of the threading edge dislocations.
URI: http://hdl.handle.net/11536/19232
ISBN: 4-900526-13-4
期刊: PROCEEDINGS OF THE INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS
Volume: 1
起始頁: 463
結束頁: 466
Appears in Collections:Conferences Paper